Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode

Abstract

The data contains measured current-voltage characteristics and simulated energy band profiles describing Zener tunnelling via zero-dimensional states in a narrow gap diode. In our devices, a narrow quantum well of the mid-infrared (MIR) alloy In(AsN) is placed in the intrinsic (i) layer of a p-i-n diode. The incorporation of nitrogen in the quantum well creates states that are localized on nanometer lengthscales. These levels provide intermediate states that act as “stepping stones” for electrons tunnelling across the diode and give rise to a negative differential resistance (NDR) that is weakly dependent on temperature.