Engineering p-n junctions and bandgap tuning of InSe nanolayers by controlled oxidation

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Publication date
2017-03-20
Creators
Patane, Amalia
Balakrishnan, Nilanthy
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Description
Data collection on the effects of thermal and laser annealing on the electronic properties of InSe
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Subjects
  • Indium compounds
  • Diodes, Semiconductor
  • Nanostructured materials
  • Indium compounds -- Oxidation
  • Annealing of metals
  • InSe, annealing, oxidation
  • Physical sciences::Physics::Chemical physics, Solid-state physics
  • Q Science::QC Physics::QC170 Atomic physics. Constitution and properties of matter
  • Q Science::QC Physics::QC350 Optics. Light, including spectroscopy
  • Q Science::QC Physics::QC501 Electricity and magnetism
Divisions
  • University of Nottingham, UK Campus::Faculty of Science::School of Physics and Astronomy
Deposit date
2017-03-20
Alternative title
  • Oxidation of InSe
Data type
Images (jpg), power point and origin files.
Funders
  • Other
  • Engineering & Physical Sciences Research Council
  • European Graphene Flagship
  • The National Academy of Sciences of Ukraine
Grant number
  • EP/M012700/1
  • EP/K005138/1
  • 604391
Collection dates
  • 2015-2016
Resource languages
  • en
Publisher
University of Nottingham