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      Engineering p-n junctions and bandgap tuning of InSe nanolayers by controlled oxidation

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      CBED of InSe layer.jpg (116.4Kb)
      CBED of Oxide layer.jpg (249.9Kb)
      CBED of Se-rich region.jpg (231.6Kb)
      EDX of annealed InSe nanolayer.docx (1.078Mb)
      Effect of thermal annealing at 125 C.opj (4.855Mb)
      Effect of thermal annealing at 125 C.pptx (3.275Mb)
      Effect of thermal annealing with increasing temperature.opj (6.867Mb)
      Effect of thermal annealing with increasing temperature.pptx (4.484Mb)
      EL of InSe-Indium oxide Junction.opj (369.2Kb)
      HRTEM of In2O3 layer.jpg (476.3Kb)
      HRTEM of InSe layer.jpg (644.6Kb)
      HRTEM of selectrd area of In2O3.jpg (123.5Kb)
      HRTEM of Se-rich region.jpg (752.1Kb)
      IV of InSe-Indium oxide p-n Junction.opj (50.46Kb)
      Photocurrent spectra of InSe-Indium oxide p-n junction.opj (30.84Kb)
      Quantum confinement of InSe.opj (143.8Kb)
      TEM of InSe-In2O3 junction.jpg (510.6Kb)
      XPS- exfoliated InSe.opj (495.0Kb)
      Publication date
      2017-03-20
      Creators
      Patane, Amalia
      Balakrishnan, Nilanthy
      Metadata
      Show full item record
      Description
      Data collection on the effects of thermal and laser annealing on the electronic properties of InSe
      External URI
      • https://rdmc.nottingham.ac.uk/handle/internal/76
      DOI
      • http://doi.org/10.17639/nott.73
      Related publication DOI
      • 10.1088/2053-1583/aa61e0
      Links
      • https://doi.org/10.1088/2053-1583/aa61e0
      • http://doi.org/10.17639/nott.73
      Subjects
      • Indium compounds
      • Diodes, Semiconductor
      • Nanostructured materials
      • Indium compounds -- Oxidation
      • Annealing of metals
      • InSe, annealing, oxidation
      • Physical sciences::Physics::Chemical physics, Solid-state physics
      • Q Science::QC Physics::QC170 Atomic physics. Constitution and properties of matter
      • Q Science::QC Physics::QC350 Optics. Light, including spectroscopy
      • Q Science::QC Physics::QC501 Electricity and magnetism
      Divisions
      • University of Nottingham, UK Campus::Faculty of Science::School of Physics and Astronomy
      Deposit date
      2017-03-20
      Alternative title
      • Oxidation of InSe
      Data type
      Images (jpg), power point and origin files.
      Funders
      • Other
      • Engineering & Physical Sciences Research Council
      • European Graphene Flagship
      • The National Academy of Sciences of Ukraine
      Grant number
      • EP/M012700/1
      • EP/K005138/1
      • 604391
      Collection dates
      • 2015-2016
      Resource languages
      • en
      Publisher
      University of Nottingham

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